Optoelectronics Group, Cavendish Laboratory

Recent Highlights

polymer light emitting transistor
The position of the recombination zone varies with gate voltage and potential difference between source and drain
Self-aligned transistor
Sub-micron channel widths are possible by adding surfactants to metallic printer inks
exciplex energy
The nature of energy and charge transfer in conjugated materials is much debated

Ambipolar devices

We have recently demonstrated the efficient transport of electrons as well as holes in FET devices, making it possible to obtain light from planar structures. Mobility and device performance are approaching thin film silicon devices.

Spatial control of the recombination zone in an ambipolar light-emitting organic transistor
J. Zaumseil, R.H. Friend, H. Sirringhaus
Nature Mater. 5 (1) p69 [2006]

Quantum efficiency of ambipolar light-emitting polymer field-effect transistors
J. Zaumseil, C.R. McNeill, M. Bird, D.L. Smith, P.P. Ruden, M. Roberts, M.J. McKiernan, R.H. Friend, S. Sirringhaus
J. Appl. Phys. 103 (6) p064517 [2008]

Self-aligned inkjet printing of small channel lengths

Channel lengths in polymer FETs less than 500nm are possible using surfactant in printing inks. [refs]

Downscaling of self-aligned, all-printed polymer thin-film transistors
Y. Y.Noh, N. Zhao, M. Caironi, H. Sirringhaus
Nature Nanotechnology 2(12) pp784-789 [2007]

Efficient nanocrystal / polymer photovoltaics

"Polymer brushes"

Self-Organization of Nanocrystals in Polymer Brushes. Application in Heterojunction Photovoltaic Diodes
H.J. Snaith, G.L. Whiting, B. Sun, N.C. Greenham, W.T.S. Huck, R.H. Friend
Nano Lett. 5 (9) p1653-1657 [2005]

Exciplex role

We use optical spectroscopy techniques to investigate the formation of exciplexes - bound "holes" and "electrons".

Electronic structures of interfacial states formed at polymeric semiconductor heterojunctions
Y.-S. Huang, S. Westenhoff, I. Avilov, P. Sreearunothai, J.M. Hodgkiss, C. Deleener, R.H. Friend, D Beljonne
Nat. Mater. 7 (6) p483-489 [2008]

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